| PART |
Description |
Maker |
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| TS4GGMP860 TS8GGMP860 |
4GB/8GB USB Flash Drive
|
Transcend Information. Inc.
|
| KVR16S11K2-16 |
16GB (8GB 2Rx8 1G x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
| KVR667D2D4F5K2-8G |
8GB (4GB 512M x 72-Bit X 2 pcs.) PC2-5300
|
List of Unclassifed Man...
|
| KVR16LN11K2-8 |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
| K9K8G08U1E |
4Gb E-die NAND Flash
|
Samsung
|
| HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH
FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
| S34MS01G1 S34MS02G1 S34MS04G1 |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| TS4GJF300 |
4GB USB2.0 JetFlash垄莽300
4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
