| PART |
Description |
Maker |
| FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU |
50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
|
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
|
| 1N5394GP 1N5395GP 1N5393GP 1N5399GP 1N5391GP 1N539 |
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| 1N4937G 1N4937GL 1N4936G 1N4936GL 1N4935G 1N4935GL |
TRANSISTOR NPN 45V SOT23 1 A, 600 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
|
Won-Top Electronics Co., Ltd.
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| DL4003-13-F DL4004-13-F DL4001-13-F DL4002-13-F DL |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| 2KBP0056 2KBP086 |
2AMP glass passivated silicon bridge rectifier
2 AMP glass passivated silicon bridge rectifier
|
COLLMER SEMICONDUCTOR INC
|
| SF10HG-T SF10GG-A SF10GG-T SF10GG-B SF10JG-T SF10J |
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER 1 A, 500 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| 2M6.8Z 2M2.Z 2M2.0Z 2M160Z 2M30Z 2M39Z 2M36Z 2M47Z |
2.0 Watts Glass Passivated Junction Silicon Zener Diodes
160 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| 6A6G 6A8G 6A2G 6A4G 6A10G |
GLASS PASSIVATED SILICON RECTIFIER
|
Changzhou Shunye Electronics Co.,Ltd.
|
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