| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| MM908E62108 |
Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
|
Freescale Semiconductor, Inc
|
| MM908E622 MM908E622ACDR2 |
Integrated Quad Half-Bridge, Triple High-Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror
|
飞思卡尔半导体(中国)有限公司
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| UJA1078 UJA1078TW/5V0/WD UJA1078TW/3V3/WD UJA1078T |
Hihg-speed CAN/dual LIN core system basis chip
DATACOM, ETHERNET TRANSCEIVER, PDSO32
High-speed CAN/dual LIN core system basis chip
|
NXP Semiconductors
|
| MC33910G5AC 3391010 |
LIN System Basis Chip with High
|
Freescale Semiconductor, Inc
|
