| PART |
Description |
Maker |
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
| LQ801-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLP05M7200-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
