| PART |
Description |
Maker |
| APT19F100J |
1000V, 19A, 0.46ヘ Max, trr ÷270ns
|
MICROSEMI[Microsemi Corporation]
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| 1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| AOT29S50 |
500V 29A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDP257212 |
N-Channel PowerTrench? MOSFET 150V, 29A, 54mΩ
|
Fairchild Semiconductor
|
| MC12148D MC12148SD MC12148 |
LOW POWER VOLTAGE CONTROLLED OSCILLATOR
Switch Mode Power Supply; Series:MFA; Output Voltage:12VDC; Output Power Max:350W; Output Current:29A; Number of Outputs:1; Efficiency:86%; External Depth:3.20"; External Height:1.50"; External Width:6.80"
PSU, 350W 24V SINGLE O/P ; Voltage, output:24V; Current, output:14.5A; Power rating:350W; Voltage, supply min:90V; Voltage, supply max:264V; Length / Height, external:38.1mm; Width, external:81.3mm; Depth, external:172mm; Current,
|
Motorola, Inc
MOTOROLA INC
|
| Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA
Microcontroller 微控制器
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
|
| BSS87 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-89, RDSon=6.0 Ohm, 0.29A, LL
|
Infineon
|
| Z4GP210L-HF |
Halogen Free Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>AV</sub>=2A
|
Comchip Technology
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
|
