| PART |
Description |
Maker |
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| SST39VF1681-70-4C-EKE SST39VF1681-70-4C-EKE-T SST3 |
64 Mbit (x16) Multi-Purpose Flash Plus
(SST39VF1681 / SST39VF1682) 16 Mbit (x8) Multi-Purpose Flash Plus
2M X 8 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
Microchip Technology Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SST39LF010-45-4C-B3HE SST39VF010-45-4C-B3KE SST39L |
512K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Microchip Technology, Inc.
Microchip Technology Inc.
Silicon Storage Technol...
|
| SST39SF010-90-4C-NH SST39SF010-90-4C-PH SST39SF512 |
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, UUC
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| SST39WF1601-90-4C-MBQE SST39WF1602-90-4C-MBKE SST3 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 1.8V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
| D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| IS42S16400-7T IS42S16400-7TI IS42S16400-6T IS42S16 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| TC58FVM7B2AFT80 |
128MBIT (16Mx8 BITS/8Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
