| PART |
Description |
Maker |
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
| CGH27015F CGH27015F-TB CGH27015F-AMP |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| SKY73012-11 |
SKY73012 400 ?3900 MHz Direct Quadrature Demodulator
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC32
|
Skyworks Solutions Inc.
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| QRC330002 QRD330002 QR3310002 QR3310001 QRC330001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 100 A, 3300 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CGH25120F CGH25120F-TB CGH25120F-AMP |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
|
Cree, Inc
|
| LNW2W332MSEG LNW2W332MSEH LNW2H102MSEG LNW2H152MSE |
3.3 V PureEdge™ Crystal (25MHz) to Dual HCSL Clock Generator with selectable (25/100/125/200 MHz) output frequencies
Analog Multiplexer/Demultiplexer
Single Buffer Non-Inverting, TTL Level
Single Inverter, Schmitt Input,TTL Level
Zener Diode 500 mW 2.5 V 5% SOD-123
Analog Multiplexers/Demultiplexers with Injection Current Effect Control
ALUMINUM ELECTROLYTIC CAPACITORS CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 3900 uF, CHASSIS MOUNT
LOG CMOS BUS INTRFCE OCTL CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
|
Nichicon Corporation
Nichicon, Corp.
|
|
