PART |
Description |
Maker |
HYS72T512341HKP HYS72T512341HJP HYS72T512341HHP HY |
240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, DMA240 240-Pin Registered DDR2 SDRAM Modules 240针DDR2 SDRAM的注册模
|
Qimonda AG
|
HYS72T512020HR-3.7-A HYS72T512020HR-5-A HYS72T5120 |
240-Pin Registered-DDR2-SDRAM Modules
|
Qimonda AG
|
HYS72T32000HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
HYS72T512022HR-3.7-A HYS72T512022HR-3S-A HYS72T512 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
HYS72T128020HP-3S-A |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
HYS72T128020HR-3.7-B HYS72T128000HR-5-B HYS72T1280 |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
HYS72T64000HP-3.7-A HYS72T64000HP-3S-A HYS72T12800 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
HYS72T64000HP-3-B HYS72T64000HP-3.7-B HYS72T64000H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
HYS72T128020HR-3-A |
240-Pin Registered DDR2 SDRAM Modules 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
Infineon Technologies AG
|
M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
0702871217 70287-1217 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 46 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective 2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 46 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
|
Molex Electronics Ltd.
|