| PART |
Description |
Maker |
| APT11N80BC3 APT11N80BC3G |
Power MOSFET; Package: TO-247 [B]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800;
Super Junction MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT94N65B2C3 APT94N65B2C3G |
Super Junction MOSFET
|
Microsemi Corporation
|
| APT47N60SC3 APT47N60BC3 |
Super Junction MOSFET
|
Advanced Power Technology
|
| APT60N60BCSG APT60N60SCS APT60N60SCSG |
Super Junction MOSFET
|
Microsemi Corporation
|
| APT11N80KC3 APT11N80KC3G |
Super Junction MOSFET
|
Microsemi Corporation
|
| APT31N80JC3 |
SUPER JUNCTION MOSFET
|
Advanced Power Technology
|
| APT77N60JC3 |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| TPA65R600C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| HCS12NK65V |
650V N-Channel Super Junction MOSFET
|
SemiHow Co.,Ltd.
|
| TPD65R600C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
| TPD65R1K2C |
650V Super-Junction Power MOSFET
|
Wuxi Unigroup Microelec...
|
