| PART |
Description |
Maker |
| IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXGM17N100 IXGH17N100 IXGH17N100A IXGM17N100A |
3.5V diode
Low V IGBT High speed IGBT
|
IXYS Corporation
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXSK30N60BD1 IXST30N60BD1 IXSH30N60BD1 |
High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IKP08N65H5 PG-TO220-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| PG-TO220-3-FP IKA15N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
