| PART |
Description |
Maker |
| 2SA1129 2SA1129-S 2SA1129-Z 2SA1129-AZ |
7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Silicon transistor
|
Panasonic Semiconductor
NEC
|
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| ASIS50-28 |
NPN SILICON RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
HF BAND, Si, NPN, RF POWER TRANSISTOR
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SD1000 2SD1000-T1 2SD1000-T2 2SD1000-AZ |
700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
NEC[NEC]
|
| 2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SB962 2SB962-Z 2SB962-ZE 2SB962-ZP 2SB962-ZR 2SB9 |
Silicon transistor
BJT
3-Pin, Ultra-Low-Power SC70/SOT23 Voltage Detectors 晶体
PNP SILICON EPITAXIAL TRANSISTOR MP-3 进步党硅外延晶体管型号：MP - 3
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
