PART |
Description |
Maker |
IRFP064N IRFP064NPBF |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A? 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)
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IRF[International Rectifier] Power MOSFET
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STE110NS20FD |
N-CHANNEL 200V 0.022 OHM 110A ISOTOP MESH OVERLAY MOSFET N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY Power MOSFET N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY⑩ Power MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
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HUFA75329S3S HUFA75329G3 HUFA75329P3 HUFA75329S3ST |
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 49A, 0.024 Ohms @ VGS = 10V TO-263/D2PAK Package 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs 49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
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FAIRCHILD[Fairchild Semiconductor]
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HUF75332G305 HUF75332S3S HUF75332G3 HUF75332P3 HUF |
55V N-Channel UltraFET Power MOSFET 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
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FAIRCHILD[Fairchild Semiconductor]
|
STW80NF55-08 8007 |
N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFETPOWER MOSFET N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET POWER MOSFET N-CHANNEL 55V - 0.0065 OHM - 80A TO-247 STRIPFET POWER MOSFET From old datasheet system N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET⑩ POWER MOSFET N-CHANNEL 55V - 0.0065 OHM - 80A TO-247 STRIPFET POWER MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STB80PF5506 STP80PF55 |
P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET II Power MOSFET P-channel 55V - 0.016楼? - 80A - TO-220 - D2PAK STripFET垄芒 II Power MOSFET P-channel 55V - 0.016ヘ - 80A - TO-220 - D2PAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
STB80NF55-06 STP80NF55-06FP STB80NF55-06-1 STB80NF |
N-channel 55V - 0.005з - 80A - TO-220 /FP - I2PAK - D2PAK STripFET⑩ II Power MOSFET N - CHANNEL 55V - 0.005ohm - 80A TO-262/TO-263 STripFET POWER MOSFET N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET N-channel 55V - 0.005?/a> - 80A - TO-220 /FP - I2PAK - D2PAK STripFET?/a> II Power MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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IRFIZ48N IRFIZ48 IRFIZ48NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
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IRF[International Rectifier]
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HUF75344S3S HUF75344P3 HUF75344G3 FN4402 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.008 Ω,N沟道,UltraFET功率MOS场效应管) From old datasheet system
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INTERSIL[Intersil Corporation]
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