| PART |
Description |
Maker |
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
|
Sensitron
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| GB05SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
