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CY7C1373B-83AC - 512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 10 ns, PQFP100

CY7C1373B-83AC_6118175.PDF Datasheet


 Full text search : 512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 10 ns, PQFP100


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CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
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MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
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16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
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Micron Technology, Inc.
IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
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256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
IDT
Integrated Device Technology, Inc.
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IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100
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256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
Integrated Device Technology, Inc.
CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
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