| PART |
Description |
Maker |
| D555 ALD555 ALD555DA ALD555PA ALD555SA |
high speed cmos timer 高CMOS计时
112dB 192kHz 24-BIT SCH DAC
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| ADLS15HD ADLS15HD-16N ADLS15HD-11N |
Intel Atom Z5xx 1.1GHz - 1.6GHz, US15W SCH
|
Advanced Digital Logic, Inc.
|
| DDR2-DRAM1024 DDR2-DRAM1024-EX DDR2-DRAM2048 DDR2- |
Intel Atom Z5xx 1.1GHz - 1.6GHz, US15W SCH
|
ADL Embedded Solutions
|
| DC342A DC342A-15 |
SCH LTC1911 LOW NOISE CONSTANT FREQUENCY STEP DOWN CHARGE PUMP PCB
|
Linear Technology
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
| MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
| AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B- |
HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温
|
Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
