| PART |
Description |
Maker |
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| BFR183W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| AT-32063 DEMO-AT32063 |
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
860兆赫级联放大
|
Agilent(Hewlett-Packard)
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| MSA-2035 MSA-2011 |
Silicon Bipolar RFIC Amplifiers(硅双极型射频电路放大
(MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent(Hewlett-Packard)
|
| MC33076DR2 MC330761 MC33076P1 MC33076-D |
Dual High Output Current, Low Power, Low Noise Bipolar Operational Amplifier
|
ON Semiconductor
|
| AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-415 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor 通用型，低噪声NPN硅双极晶体管
General Purpose/ Low Noise NPN Silicon Bipolar Transistor
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| BFR93AW |
Low Noise Silicon Bipolar RF Transistor
|
Infineon Technologies A...
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| 13003ADAG-T60-F-K 13003ADAG-T92-F-B 13003ADAG-T92- |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
|
Unisonic Technologies
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
