| PART |
Description |
Maker |
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET
P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| FDC6420 FDC6420C FDC6420CD84Z |
20V N & P-Channel PowerTrench MOSFETs
3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF3706 IRF3706L IRF3706S IRF3706STRL IRF3706STRR |
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| NDH8304 NDH8304P |
Dual P-Channel Enhancement Mode Field Effect Transistor2.7A20V0.07Ω双P沟道增强型场效应管（漏电2.7A, 漏源电压-20V，导通电0.07Ω 2700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ITF87056DQT |
5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET 5A0V的，0.045欧姆，双P沟道.5V的指定功率MOSFET
5A/ 20V/ 0.045 Ohm/ Dual P-Channel/ 2.5V Specified Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| FDMA6023PZT |
-20V Dual P-Channel PowerTrench® MOSFET; 6-MicroFET 3600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
