| PART |
Description |
Maker |
| APT8030JVR |
POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| AOW15S65 AOWF15S65 |
650V 15A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|
| RGTH50TK65D |
650V 25A Field Stop Trench IGBT
|
ROHM
|
| MIT-5A117 |
ISOLATOR, FLUSH 25A 3 POLEISOLATOR, FLUSH 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:2.2kW; Switch function type:Triple Pole 开槽光电断路器
SLOTTED PHOTOINTERRUPTER
|
Unity Opto Technology Co., Ltd.
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| FTR-P2 FTR-P2CP012W1 FTR-P2CN012W1 FTR-P2CP010W1 F |
SILENT TWIN RELAY FOR AUTOMOTIVE APPLICATIONS 1POLE X 2, H-BRIDGE, 25A 静音双继电器为汽车应POLE × 2，H桥，25A
|
Fujitsu Limited
Fujitsu, Ltd.
|
| FTR-G1CN010W1 FTR-G1CN009W1 FTR-G1CN012W1 FTR-G111 |
COMPACT POWER RELAY 1 POLE - 25A (For Automotive Applications)
POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.064A (COIL), 10VDC (COIL), 640mW (COIL), 25A (CONTACT), 14VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
POWER/SIGNAL RELAY, SPDT, MOMENTARY, 0.053A (COIL), 12VDC (COIL), 640mW (COIL), 25A (CONTACT), 14VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT
|
Fujitsu Component Limited.
FUJITSU COMPONENT LTD
|
