| PART |
Description |
Maker |
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| BUZ103SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| MRF136Y |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET
|
MACOM[Tyco Electronics]
|
| RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| AM29F200B-75FC AM29F200B-75SC AM29F200B-75EC AM29F |
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3714Z with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7493 with Standard Packaging
x8/x16 Flash EEPROM
40V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL1404ZS with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3803S with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1405ZL with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR024N with Lead Free Packaging
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2407 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3410 with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2407 with Standard Packaging
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package; A IRFB4019PBF with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1302L with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR2405 with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF630NS with Tape and Reel Right Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR7843 with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF540ZL with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF540N with Standard Packaging
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP, 59 Amps
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3705Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3303 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU024Z with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3704ZCS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF630NS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46ZL with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL7833L with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging
12V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7476 with Lead Free Packaging x8/x16闪存EEPROM
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7495 with Standard Packaging x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
Aeroflex, Inc.
|
| RJK0358DSP-00-J0 RJK0358DPA RJK0358DPA-00-J0 RJK03 |
38 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
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