PART |
Description |
Maker |
MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors 2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
B39171-B3804-U210 B3804 |
SAW Components Low-loss Filter 170,2 MHz 1 FUNCTIONS, 170.2 MHz, SAW FILTER
|
EPCOS[EPCOS] EPCOS AG
|
AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
LMSP54AA-097 |
RF Diode Switches 880 MHz - 915 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
|
Murata Manufacturing Co., Ltd.
|
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MRF21120 |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
MHW913 |
14 WATT 880-915 MHz RF POWER AMPLIFIER
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
SM1145JDS-FREQ-OUT21 SM1145JDV-FREQ-50-OUT21 |
CRYSTAL OSCILLATOR, CLOCK, 70 MHz - 170 MHz, CMOS OUTPUT
|
PLETRONICS INC
|