Part Number Hot Search : 
AM79C 1N473 T1307 TC5588P 03001 2SC25 ATTIN MC68HC90
Product Description
Full Text Search

MRF9180R6 - 880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET

MRF9180R6_5894871.PDF Datasheet

 
Part No. MRF9180R6
Description 880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 231.16K  /  12 Page  

Maker

Freescale (Motorola)



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF9180
Maker: MOTOROLA
Pack: 高频管
Stock: Reserved
Unit price for :
    50: $104.62
  100: $99.39
1000: $94.16

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF9180R6 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF9180R6 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF9180R6 ]

[ Price & Availability of MRF9180R6 by FindChips.com ]

 Full text search : 880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET


 Related Part Number
PART Description Maker
MRF9120 MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
Motorola
MRF5S9070NR1 880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
Freescale Semiconductor, Inc
MOTOROLA
B39171-B3804-U210 B3804 SAW Components Low-loss Filter 170,2 MHz
1 FUNCTIONS, 170.2 MHz, SAW FILTER
EPCOS[EPCOS]
EPCOS AG
AGR21030EF 30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
TriQuint Semiconductor
LMSP54AA-097 RF Diode Switches 880 MHz - 915 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
Murata Manufacturing Co., Ltd.
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
MRF21120 MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
Motorola, Inc
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
Freescale Semiconductor, Inc
MOTOROLA
MHW913 14 WATT 880-915 MHz RF POWER AMPLIFIER
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
MRF9060MR1 MRF9060MBR1 MRF9060M MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MOTOROLA[Motorola, Inc]
SM1145JDS-FREQ-OUT21 SM1145JDV-FREQ-50-OUT21 CRYSTAL OSCILLATOR, CLOCK, 70 MHz - 170 MHz, CMOS OUTPUT
PLETRONICS INC
 
 Related keyword From Full Text Search System
MRF9180R6 Device MRF9180R6 hitachi MRF9180R6 texas MRF9180R6 data sheet ic MRF9180R6 analog devices
MRF9180R6 price MRF9180R6 sanyo MRF9180R6 Hex MRF9180R6 hot MRF9180R6 bookmark
 

 

Price & Availability of MRF9180R6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.11298108100891