PART |
Description |
Maker |
M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM 8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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M28W160BTT100GB1T M28W160BTT100GB6T M28W160BTT100N |
16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory 16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
|
M29W008B M29W008B-100N1TR M29W008B-100N5TR M29W008 |
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M27W801 |
8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位(含2Mb x8兆x16插槽,引导块3V电源快闪记忆 CAP 3300UF 6.3V ELECT FC RADIAL 16兆位(含2Mb x8兆x16插槽,引导块V电源快闪记忆 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory 16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
|
27C801 M27C801 M27C801-100B1TR M27C801-100B1X M27C |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
|
STMICROELECTRONICS [STMicroelectronics] ST Microelectronics
|
M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体兆位128KB的x16的SRAM,多个存储产 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体2兆位128KB的x16的SRAM,多个存储产 PV76L14-18P
|
http:// STMicroelectronics N.V. 意法半导
|
M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
3.3V-5V 1Mb (128K x 8) Timekeeper SRAM(1Mb TIMERKEEPEER SRAM) 5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER SRAM
|
意法半导 STMicroelectronics
|
M29W008EB70N1E M29W008EB70N1F M29W008EB70N6E M29W0 |
Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
M36W216BI70ZA1T M36W216TI70ZA1T M36W216TI85ZA1T M3 |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product
|
ST Microelectronics
|
HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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M27W016 |
16 MBIT (1MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY
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ST Microelectronics
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