| PART |
Description |
Maker |
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| MCM69R738AZP7R MCM69R738AZP5 MCM69R738A MCM69R738A |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MCM69L820AZP9R MCM69L738A MCM69L738AZP8.5 MCM69L73 |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola, Inc]
|
| MCM69L819AZP9R MCM69L737A MCM69L737AZP8.5 MCM69L73 |
From old datasheet system
4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc]
|
| GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
| MCM63R836 MCM63R918FC3.7R MCM63R918FC3.3R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
MCM63R836
|
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor, Inc.
|
| K7Z167288B K7Z163688B |
512Kx36 & 256Kx72 DLW(Double Late Write) RAM
|
Samsung semiconductor
|
| GS8330DW36 GS8330DW36-200 GS8330DW72C GS8330DW36-2 |
36Mb Common I/O SigmaRAMs
Double Late Write SigmaRAM
|
ETC
GSI[GSI Technology]
|
| MCM63R918 MCM63R836 |
8MBit Synchronous Late Write Fast Static RAM(8M位同步迟写快速静态RAM)
|
Motorola, Inc.
|
| MT59L128V36PB-4.5 |
128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Cardinal Components, Inc.
|
| HM64YGB36100 HM64YGB36100BP-33 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
