| PART |
Description |
Maker |
| R6018ANX12 |
Nch 600V 18A Power MOSFET
|
Rohm
|
| OSOPA1001A OSOPA1002C OSOPA1003C OSOPA5000A OSOPA5 |
MOSFET N-CH 600V 18A PLUS220-SMD
Molded, 25 Mil Pitch, Dual-In-Line Resistor Network 成型5军医间距，双列直插式电阻网络
|
http://
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| STGP12NB60KD STGB12NB60KD STGB12NB60KDT4 |
N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF640L IRF640S |
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
| 18N40 18N40G-TF1-T 18N40G-T47-T 18N40G-TA3-T 18N40 |
18A, 400V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
| HY18N50W |
500V / 18A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
