| PART |
Description |
Maker |
| CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1315KV18-333BZC |
18-Mbit QDRII SRAM Four-Word Burst Architecture
|
Cypress
|
| CY7C1512KV18-250BZIT |
72-Mbit QDRII SRAM Two-Word Burst Architecture
|
Cypress
|
| CY7C1243KV18-400BZC CY7C1243KV18-450BZC CY7C1245KV |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| CY7C1163KV18-550BZC CY7C1165KV18-400BZC CY7C1165KV |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C1562XV18-450BZXC |
72-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC |
72-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| UPD44165364F5-E60-EQ1 UPD44165084 UPD44165084F5-E4 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K |
72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
http://
Cypress Semiconductor, Corp.
|
| R1Q3A3609BBG-60R R1Q3A3636BBG-60R R1Q3A3636BBG-50R |
36-Mbit QDR垄芒II SRAM 4-word Burst
36-Mbit QDR?II SRAM 4-word Burst
|
Renesas Electronics Corporation
http://
|
| CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture
72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE
72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
