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K9K2G0816QU0M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet

K9K2G0816QU0M_5831908.PDF Datasheet
 Full text search : 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet

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K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K9K4G08U1M K9F2G16U0M K9F2G08U0M 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
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Elpida Memory
UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
 NEC
K9K4G08U0M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
 SAMSUNG
K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
 Samsung Electronic
SAMSUNG[Samsung semiconductor]
UPD46128953F1-EB1 UPD46128953-X UPD46128953-E15X U 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
 NEC
UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-X 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)
 NEC
UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM
128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
 NEC
K9K2G08U0A 256M x 8 Bit NAND Flash Memory
 Samsung Electronic
Samsung semiconductor
K4S280832B 128M-bit SDRAM
 Samsung Electronics
HYB25DC256160C (HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
 Infineon Technologies Corporation
 
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K9K2G0816QU0M Driver K9K2G0816QU0M Pin K9K2G0816QU0M 参数 封装 K9K2G0816QU0M transistor K9K2G0816QU0M Regulator
 

 

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