| PART |
Description |
Maker |
| CY7C1911BV18 |
(CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7Q161862 K7Q161862B K7Q163662B |
512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R643684M K7R641884M |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7S3236T4C K7S3218T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
| PD44165094BF5-E33-EQ3-A PD44165094BF5-E35-EQ3 PD44 |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
