| PART |
Description |
Maker |
| EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8
|
ON Semiconductor
|
| FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE
20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
| FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| NTJD4105C NTJD4105CT1 NTJD4105CT1G NTJD4105CT2 NTJ |
Small Signal MOSFET 20V/-8V, Complimentary 0.63A/-0.775A SC-88
Small Signal MOSFET 20 V / −8.0 V, Complementary, 0.63 A / −0.775 A, SC−88
|
ON Semiconductor
|
| IRF7106 IRF7106TR |
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)
|
IRF[International Rectifier]
|
| ACE634 |
20V Complementary Enhancement Mode Field Effect Transistor
|
ACE Technology Co., LTD.
|
| CMUDM70058005 |
20V, 650mA, Complementary MOSFETs in the miniature SOT-523 package
|
Central Semiconductor Corp
|
| FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET
P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| NTHD3101F NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTH |
Power MOSFET and Schottky Diode(20V, 4.4A???MOSFET)
Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
|
ON Semiconductor
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
