| PART |
Description |
Maker |
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFI9630TU |
200V P-Channel A-FET
|
Fairchild Semiconductor
|
| IRLI610A IRLW610A IRLI610ATU IRLW610ATM |
Advanced Power MOSFET
200V N-Channel Logic Level A-FET
|
Fairchild Semiconductor
|
| IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET
200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
