| PART |
Description |
Maker |
| FDV302PNL |
Digital FET,P-Channel 120 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| 5764B |
INTERBUS Inline Terminal With One Digital Input in the 120 V AC Voltage Area
|
PHOENIX CONTACT
|
| 66015-103 66015 66015-001 66015-002 66015-003 6601 |
SINGLE CHANNEL OPTOCOUPLERS(REPLACEMENT FOR TIL 120, TIL 121) 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
SINGLE CHANNEL OPTOCOUPLERS(REPLACEMENT FOR TIL 120/ TIL 121)
|
Micropac Industries, Inc.
MICROPAC[Micropac Industries]
|
| BUK661R6-30C |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BUK663R5-55C |
N-channel TrenchMOS intermediate level FET 120 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| IXTT120N15P IXTQ120N15P |
120 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
N-Channel Enhancement Mode
|
IXYS CORP
IXYS Corporation
|
| MXP1005 |
Solar Array Diode; Package: SEE_FACTORY; IO (A): 2.25; Cj (pF): 600; Vrwm (V): 120; VF (V): 0.84; TSTG/Top (ºC): 200; Tj (ºC): 150; IR (µA): 10; 2.25 A, 120 V, SILICON, RECTIFIER DIODE
Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| C9732DK-1111 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 × 120 mm
|
Hamamatsu Corporation
|
| VN1206L |
N-Channel 120-V (D-S) MOSFET
|
Vishay Siliconix
|
| EH2700TTS-120.000M |
OSCILLATORS 100PPM 0 70 2.5V 4 120.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| NVMFS5832NL NVMFS5832NLT1G NVMFS5832NLT3G NVMFS583 |
Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel
|
ON Semiconductor
|
|
