PART |
Description |
Maker |
BG313007 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
BG3140 BG3140R |
RF-MOSFET - Package: SOT363 DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
BF994SA BF994SB BF994S BF994 |
From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
BF1009 |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
BF5020R BF5020W BF5020WE6327 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
Q62702-F1055 BF997 |
From old datasheet system Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BF1009SR BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
BF961 BF961A BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
BF2030W Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
BF2030 Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|