| PART |
Description |
Maker |
| 2N4171 |
SCR, V(DRM) = 300V TO 399.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| 2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR
0.25 A, 100 V, SCR, TO-52
8 A, 50 V, SCR, TO-64
1.6 A, 300 V, SCR, TO-5
0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18
0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
| R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB
1852.6 A, 200 V, SCR
1891.85 A, 1800 V, SCR
1271.7 A, 200 V, SCR, TO-200AC
1271.7 A, 400 V, SCR, TO-200AC
1271.7 A, 600 V, SCR, TO-200AC
1271.7 A, 1000 V, SCR, TO-200AC
1271.7 A, 800 V, SCR, TO-200AC
1998.61 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
| P036RH06FNO P042RH04CM P027PH04CJO P042RH04CMO P02 |
100 A, 600 V, SCR
100 A, 400 V, SCR, TO-65
670 A, 600 V, SCR, TO-200AB
755 A, 600 V, SCR, TO-200AB
670 A, 200 V, SCR, TO-200AB
355 A, 600 V, SCR
355 A, 1000 V, SCR
355 A, 400 V, SCR
5680 A, 2600 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| VSKT230-20 VSKT230-20PBF VSKT230-12PBF VSKT230-16 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A
|
Vishay Siliconix
|
| CS3P-40B CS3P-40D CS3P-40M CS3P-40N CS3P-40P CS3P- |
40 A, 1000 V, SCR TO-3P, 3 PIN
40 A, 1200 V, SCR TO-3P, 3 PIN
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| TTB6C75N08KOF TDB6HK110N06KOF TDB6HK110N12KOF |
60 A, 800 V, SCR
90 A, 600 V, SCR
90 A, 1200 V, SCR
|
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