PART |
Description |
Maker |
TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位(100万16位)的CMOS闪存EEPROM的(1,600 EEPROM中的CMOS与非
|
Toshiba Corporation Toshiba, Corp.
|
MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
MX27C1610 |
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
|
Macronix International
|
MX27C1610 27C1610-10 27C1610-12 |
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
MX29F1611 29F1611 |
16M-BIT [2M x 8/1M x 16] CMOS From old datasheet system
|
Macronix 旺宏
|
GM71V64403A |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
MX29F1610A_B 29F1610A |
16M-BIT [2M x8/1M x16] CMOS From old datasheet system
|
Macronix 旺宏
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|