| PART |
Description |
Maker |
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| GP1600FSM18 |
Hi-Reliability Single Switch IGBT Module 1600 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| CPV363MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| CPV363MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
| APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FP7G75US60 |
Transfer Molded Type IGBT Module; ; No of Pins: 7; Container: Rail 75 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| GP801DDS18 |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
