PART |
Description |
Maker |
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
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IRF[International Rectifier]
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IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A) Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
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IRF[International Rectifier]
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STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET N-CHANNEL Power MOSFET
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 CONNECTOR ACCESSORY N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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STP11NM60A STP11NM60AFP STB11NM60A-1 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmeshPower MOSFET N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?Power MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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STSJ2NM60 |
N-CHANNEL 600V - 2.8 OHM - 2A POWER SO-8 ZENER-PROTECTED MDMESH POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh⑩ POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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IRFBC40 IRFBC42 FBC40 |
6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs 6.2A.4A00V的,1.2.6 Ohm的N通道功率MOSFET
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Harris Semiconductor International Rectifier Harris Corporation Harris, Corp.
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STB9NK60ZD06 STP9NK60ZD STB9NK60ZD STF9NK60ZD |
N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET N-channel 600V - 0.85楼? - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh垄芒 Power MOSFET
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STMicroelectronics
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