PART |
Description |
Maker |
NTE2088 |
Dual Differential Comparator, Enhanced Voltage 8-TSSOP -40 to 125 Integrated Circuit 4-Segment Darlington Array, w/Pre-Driver Stage for use with PMOS and 12V CMOS
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
NTE966 |
Integrated Circuit 3-Terminal Positive Voltage Regulator, 12V
|
NTE Electronics
|
TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 |
1,048,576-WORD BY 16-BIT CMOS STATIC RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70 Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
KS9210 |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|