| PART |
Description |
Maker |
| HTX4-600S |
NON INSULATED TYPE SENSITIVE GATE TRIACThe
|
SemiHow Co.,Ltd.
|
| BT139 BT139-600E |
Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.
BT139 series E Triacs; sensitive gate
|
NXP Semiconductors
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D |
Sensiteve Gate Silicon Controlled Rectifier
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| T0400NA18A |
Insulated Gate Bi-polar Transistor - Capsule Type
|
Westcode Semiconductors
|
| Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
