| PART |
Description |
Maker |
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| SLF7032T-4R7M1R7-2-PF |
L-Q Frequency Characteristics DC Bias & Temperature Characteristics Temperature Characteristics Temperature Rise
|
TDK Electronics
|
| GRM0115C1E1R7CE01 GRM0115C1E6R7CE01 GRM0112C1E1R6C |
Temperature range of temperature characteristics
Temperature characteristics (complied standard)
Temperature coefficient
Rated voltage
Operating temperature range
|
Murata Manufacturing Co...
|
| CRCC1206 |
Choice of Dielectric Characteristics (X7R or Y5U), Wraparound Termination, Thick Film R/C Element, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Standard Size
|
Vishay
|
| GRM0225C1ER50BDAE GRM0225C1ER80BDAE GRM0225C1E5R6W |
Temperature characteristics (complied standard)
Rated voltage
|
Murata Manufacturing Co...
|
| 6SVP470M IS61C3216-10K IS61C3216-10T IS61C3216-12K |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 10 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 12 ns, PDSO44
Frequency characteristics
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Sanyo Semicon Device
Integrated Silicon Solution Inc
|
| MB6022NSC-2 |
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20°C, RH=65%)
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20隆?C, RH=65%)
|
Knowles Electronics
|
| MB9750USB-4 |
Electrical Characteristics Test Condition (Vs= 1 . 5 V, RL= 0 . 6 8 k ohm, Ta=20隆?C, RH=65%)
Electrical Characteristics Test Condition (Vs= 1 . 5 V, RL= 0 . 6 8 k ohm, Ta=20°C, RH=65%)
|
Knowles Electronics
|
| 74F212SCQR 74F212L1CQR 54F212L1MQB 54F212DMQB 74F2 |
16 X 9 STANDARD SRAM, 28 ns, PDSO20
16 X 9 STANDARD SRAM, 28 ns, CQCC20
16 X 9 STANDARD SRAM, 28 ns, CDIP20
16 X 9 STANDARD SRAM, 28 ns, PQCC20
|
FAIRCHILD SEMICONDUCTOR CORP
|
| ACTF45-48 ACTF45-48_44.25-48.24_W2 ACTF45-48/44.25 |
the characteristics of the SAW Duplexer
|
Advanced Crystal Technology
|
