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MJE3439 - Leaded Power Transistor General Purpose

MJE3439_5564193.PDF Datasheet


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CSB772P CSB772R CSB772 CSB772E CSB772Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
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CSB1436R CSB1436P CSB1436 1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 5A条一(c)|26
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CSD363 CSD363O CSD363R CSD363Y 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
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From old datasheet system
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