| PART |
Description |
Maker |
| KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大
3 CHANNEL R.G.B VIDEO AMPLIFIER
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| BB814 BB814-1 BB814-2 |
Small signal capacitance diode for frequency tuning in FM radio tuners
Silicon Epitaxial Planar Dual Capacitance Diode
From old datasheet system
|
Vishay Telefunken
Vishay Siliconix
|
| HVU202B |
Diodes>Variable Capacitance
Variable Capacitance Diode for UHF/VHF tuner
|
Renesas Electronics Corporation
|
| G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
|
| SA56614-44GW SA56614-20GW SA56614-20 SA56614-29 SA |
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitance:1200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
CMOS system reset
|
PHILIPS[Philips Semiconductors]
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PT2124 PT2124-C4 PT2124-C4-NNXI-C PT2124-C4-NNXI-F |
FAN CONTROLLER 风扇控制
Film Capacitor; Voltage Rating:1000VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.056uF; Capacitance Tolerance: /- 10%; Lead Pitch:22.5mm; Leaded Process Compatible:Yes; Package/Case:M RoHS Compliant: Yes
|
Princeton Technology, Corp.
Princeton Technology Corporation
PTC[Princeton Technology Corp]
|
| HVL355CM |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU17 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| NP0080TAT1G NP0120TAT1G NP0160TAT1G NP0080TA |
Low Voltage Low Capacitance Surge Protection Device
Low Capacitance Protector
|
ON Semiconductor
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
