| PART |
Description |
Maker |
| ESJA08-12 |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| SHV-12 |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJC13-12 |
350mA 12kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| HV600S12 |
600mA 12kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJC60S12 |
600mA 12kV -High Voltage Power Diodes
|
GETAI ELECTRONICS DEVIC...
|
| 2CL71 |
5mA 8kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| 2CL72 |
5mA 10kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA52-10A |
10kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| 2CL77 |
5mA 20kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA53-20A |
5mA 20kV HIGH VOLTAGE SILICON RECTIFIER DIODES
|
getedz electronics
|
| HV500F12 |
12kV 450mA HIGH VOLTAGE DIODE
|
getedz electronics
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
