| PART |
Description |
Maker |
| PALCE22V10-15 PALCE22V1096 PALCE22V10-15KMB PALCE2 |
Flash Erasable, Reprogrammable CMOS PAL㈢ Device
Flash Erasable, Reprogrammable CMOS PAL? Device
Flash Erasable, Reprogrammable CMOS PAL垄莽 Device
|
Cypress Semiconductor
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| CY7C263-20JC CY7C263-20PC CY7C263-20WC CY7C263-55P |
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 45 ns, PDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 20 ns, PDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 UVPROM, 35 ns, CDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 35 ns, PDIP24
Memory : PROMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25P |
4 Mbit Uniform Sector, Serial Flash Memory
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| ATF22LV10CQZ-30XC ATF22LV10CQZ-30XI ATF22LV10CQZ-3 |
High-performance Electrically Erasable Programmable Logic Device
FLASH PLD, 30 ns, PQCC28 PLASTIC, MS-018AB, LCC-28
FLASH PLD, 25 ns, PQCC28 PLASTIC, MS-018AB, LCC-28
30NS, TSSOP, IND TEMP, GREEN(EPLD) FLASH PLD, 30 ns, PDSO24
|
ATMEL Corporation
Atmel, Corp.
|
| M25PE10 |
(M25PE10 / M25PE20) Page-Erasable Serial Flash Memories
|
ST Microelectronics
|
| PY264 PY264-45PM PY264-45PMB PY264-55PMB PY264-35P |
8K X 8 REPROGRAMMABLE PROM 8K的8可重复编程胎膜早
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 45 ns, CDIP24
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 55 ns, CDIP24
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| P89LPC931A1 P89LPC931A1FDH P89LPC9301 P89LPC9301FD |
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable flash
|
NXP Semiconductors
|
| P89LPC9401 P89LPC9401FBD |
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 32 segment x 4 LCD driver
|
PHILIPS[Philips Semiconductors]
|
