PART |
Description |
Maker |
IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDD10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT12S60C-08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies A...
|
IDC08S60CE |
2nd generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDD06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDD05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC08S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDC06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|