| PART |
Description |
Maker |
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| SGW23N60UFD SGW23N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGW13N60UFD SGW13N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SGR6N60UF SGR6N60UFTF SGR6N60UFTM |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGF23N60UF SGF23N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGP40N60UF SGP40N60 SGP40N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
