| PART |
Description |
Maker |
| 2673000501 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2643022401 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643004701 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| BAR16-1 BAR15-1 BAR14-1 |
RF switch, RF attenuator for frequencies above 10 MHz
|
Infineon Technologies A...
|
| 2643000801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643020501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| AP6970GN2-HF AP6970GN2-HF-14 |
Bottom Exposed DFN, Lower Profile
Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
