| PART |
Description |
Maker |
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| IDT71008S12Y IDT71008S20PH |
cmos static ram 32K*16-BIT 32K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Device Technology, Inc.
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CAT24WC33PE-1.8TE13B CAT24WC33XA-1.8TE13D CAT24WC3 |
32K/64K-Bit I2C Serial CMOS EEPROM 32K/64K-Bit I2C串行CMOS EEPROM
|
Cypress Semiconductor Corp.
TDK, Corp.
Panasonic, Corp.
Air Cost Control
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MCM6206BB MCM6206BBEJ12 MCM6206BBEJ12R MCM6206BBEJ |
32K x 8 Bit Fast Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
32K x 8 Bit Fast Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
32K x 8 Bit Fast Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| AT29C257-70 AT29C257-15JC AT29C257-12JC AT29C257-9 |
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125
256K 32K x 8 5-volt Only CMOS Flash Memory 256K 32K的8 5伏只有闪存的CMOS
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 32K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Atmel Corp.
Atmel, Corp.
|
| UPD43257B |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
|
