| PART |
Description |
Maker |
| WTPB12A60CW |
Sensitive Gate Bi-Directional Triode Thyristor
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| BT139 BT139-600E |
Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.
BT139 series E Triacs; sensitive gate
|
NXP Semiconductors
|
| MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| BTA151 BTA151-500R BTA151-650R BTA151-800R BTA151S |
Thyristors sensitive gate 晶闸管敏感门
Thyristors sensitive gate 12 A, 500 V, SCR
|
Motorola Mobility Holdings, Inc.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| MCR106-6 MCR106-8 MCR106-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers
|
ON Semiconductor
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
Sensitive Gate Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| BT138 BT138-600D BT138-600E BT138-800E BT138-600E1 |
4Q Triac 4Q双向可控
12 A four-quadrant triacs, sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 600 V; Package: SOT78 (TO-220AB); Container: Tube pack
12 A four-quadrant triacs, sensitive gate; Package: SOT78 (TO-220AB); Container: Tube pack
|
NXP Semiconductors N.V.
|
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
