PART |
Description |
Maker |
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
MGF0952P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0907B MGF0907B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
MGF1601B-01 |
High-power GaAs FET
|
Mitsubishi Electric Sem...
|
FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|