PART |
Description |
Maker |
NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
MGF0906 MGF0906B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited Sumitomo Electric Industries, Ltd.
|
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HWF1682RA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
TIM1414-7NBSP |
MICROWAVE POWER GAAS FET
|
TOSHIBA
|
HWL26NPA |
L-Band GaAs POWER FET
|
Hexawave, Inc
|
TIM1414-8 TIM1414-8L |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
TPM2626-30 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|