| PART |
Description |
Maker |
| KH104 |
DC to 1.1GHz Linear Amplifier
From old datasheet system
|
Fairchild Semiconductor Corporation
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| TSH69001 TSH690_01 TSH690 TSH690ID TSH690IDT |
40MHZ TO 1GHZ AMPLIFIER
40MHz to 1GHz AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| ALM31122-BLKG ALM31122-TR1G ALM31122-TR2G |
700MHz - 1GHz 1-Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| NJG1105F |
1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| RFDA0066 RFDA0066PCK-410 RFDA0066SQ RFDA0066TR13 R |
DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL
|
RF Micro Devices
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| RF6100-4PCBA RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module
3V 1900MHZ LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| RF3300-2 |
3 V 900 MHz Linear Amplifier Module
3V 900MHz LINEAR AMPLIFIER MODULE
|
RF Micro Devices
|
| MHW1345 |
GENERAL PURPOSE LINEAR AMPLIFIER MODULE 10 MHz - 200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
MHW1345 10-200 MHz, 34.5 dB, 800 mW General Purpose Linear Amplifier Module
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| D2001UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(???澶??DMOS灏??纭?????绠?2.5W-28V-1GHz,???寮?)
|
SemeLAB
SEME-LAB[Seme LAB]
|
