PART |
Description |
Maker |
2N3004 |
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
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1N4148WT 1N4727A-1N4761A |
Silicon Epitaxial Planar Switching Diode Silicon Planar Power Zener Diodes
|
Kingtronics International Company Kingtronics Internation...
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MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor PNP Silicon Epitaxial Planar Transistor SILICON EPITAXIAL PLANAR DIODE NPN Silicon Epitaxial Planar Transistors SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PNP SILICON EPITAXIAL POWER TRANSISTOR BAND SWITCHING DIODE SILICON EPITAXIAL PLANAR SWITCHING DIODE SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD. SEMTECH ELECTRONICS LTD...
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HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
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http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流(电压范围- 50000伏特,电六点○安培)
|
WINGS[Wing Shing Computer Components] Vishay Intertechnology, Inc.
|
2SC5775 2SA2063 |
General-Purpose Amplifier Transistors PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
|
SANYO[Sanyo Semicon Device]
|
2SB1232 2SD1842 |
PNP Epitaxial Planar Silicon Transistor 100V/40A Switching Applications NPN Triple Diffused Planar Silicon Transistor
|
Sanyo
|
2SD613 2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ... Reverse Path Amplifiers Reverse Amplifier with Step Attenuator
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
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ZMY1 ZMY33 ZMY51 ZMY15 ZMY20 ZMY47 ZMY91 ZMY10 ZMY |
Silicon Planar Zener Diodes SILICON PLANAR POWER ZENER DIODES Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 surface mount silicon Zener diodes
|
Honey Technology SEMTECH[Semtech Corporation]
|
Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) RES,CHIP,1K,1/16W,5%,0402 ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Z02W2.0V
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齐纳二极 http:// KEC Holdings KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
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